Effect of Ion Implantation Temperature on Formation of Nanometric β-FeSi2 Layer

Abstract

A nanometric buried layer of iron disilicide was synthesized by ion implantation in Si(1 1 1) p-type at different

temperatures using 195 keV Fe ions with a dose of 2.1017 Fe+

/cm2

. The investigation of the phase composition is carried out by

Rutherford backscattering spectrometry (RBS), whereas the structural characterization is obtained by X-ray diffraction (XRD) pole

figure. The process of the silicidation has been investigated at a function of the ion implantation temperatures ranging from 200 to

440 °C. The precipitates favor epitaxial growth with respect to Si(1 1 1) planes with epitaxial relationships -FeSi2(2 2 0) //Si(1 1

1) and/or -FeSi2 (2 0 2) // Si(1 1 1).