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On Approach to Increase Integration Rate of Complementary Gate Overlap Field-Effect Heterotransistors in the Framework of a Double Tail Comparator |
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PP: 1-12 |
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doi:10.18576/ijnc/090101
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Author(s) |
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Evgeny L. Pankratov,
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Abstract |
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| In this paper we introduce an approach to increase integration rate of complementary gate overlap field-effect heterotransistors framework a double tail comparator. In the framework of the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized. |
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