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Performance Analysis of Ge Channel Double Gate MOSFETs with High K/Ge Material Based on Inversion Charge Model, Vol. 6, No. 2 (Jul. 2018), PP:21-32
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Authors: |
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P. Vimala - Department of Electronics and Communication Engineering, Dayananda Sagar College of Engineering, K.S.Layout, Bengaluru-560 078, Karnataka, India.
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Nithin Kumar N. R. - Department of Electronics and Communication Engineering, Dayananda Sagar College of Engineering, K.S.Layout, Bengaluru-560 078, Karnataka, India.
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How to Cite:
P. Vimala, Nithin Kumar N. R., Performance Analysis of Ge Channel Double Gate MOSFETs with High K/Ge Material Based on Inversion Charge Model, Journal of Nanotechnology & Advanced Materials, Vol. 6, No. 2, pp: 21-32, 2018, Doi: https://dx.doi.org/10.18576//
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