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On Approach to Increase Integration Rate of Complementary Gate Overlap Field-Effect Heterotransistors in the Framework of a Double Tail Comparator, Volume 9, No.1 (Jan. 2026), PP:1-12
doi:10.18576/ijnc/090101
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Authors: |
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Evgeny L. Pankratov - Nizhny Novgorod State Agrotechnical University, 97 Gagarin avenue, Nizhny Novgorod, 603950, Russia
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How to Cite:
Evgeny L. Pankratov, On Approach to Increase Integration Rate of Complementary Gate Overlap Field-Effect Heterotransistors in the Framework of a Double Tail Comparator, International Journal of Nanomaterials and Chemistry, Volume 9, No.1, pp: 1-12, 2026, Doi: https://dx.doi.org/10.18576/ijnc/090101
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